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Monday, October 17, 2016
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
Nano Letters
DOI: 10.1021/acs.nanolett.6b01781
from Nano Letters: Latest Articles (ACS Publications) http://ift.tt/2emibLV
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