Monday, November 30, 2015

A Phenomenological Model for Selective Growth of Semiconducting Single-Walled Carbon Nanotube Based on Catalyst Deactivation

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05673J, Paper
Shunsuke Sakurai, Maho Yamada, Hiroko Sakurai, Atsuko Sekiguchi, Don N. Futaba, Kenji Hata
A method for the selective semiconducting single-walled carbon nanotube (SWCNT) growth over a continuous range from 67% to 98%, within the diameter range of 0.8-1.2 nm, by the use of...
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