Thermodynamic stability of high phosphorus concentration in silicon nanostructures

Nanoscale, 2015, 7,14469-14475
DOI: 10.1039/C5NR02584B, Paper

Michele Perego, Gabriele Seguini, Elisa Arduca, Jacopo Frascaroli, Davide De Salvador, Massimo Mastromatteo, Alberto Carnera, Giuseppe Nicotra, Mario Scuderi, Corrado Spinella, Giuliana Impellizzeri, Cristina Lenardi, Enrico Napolitani
An energy barrier of 0.9 eV guarantees stable incorporation of P atoms in Si nanocrystals embedded in SiO₂.
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