Study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR04592D, Paper

Ya YI, Changming Wu, Hong-Chao Liu, Jiali Zeng, Hongtao He, Jiannong Wang
Schottky contacts, formed at metal/semiconductor interfaces, always have large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition...
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