Thursday, August 13, 2015

Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects

Nanoscale, 2015, 7,14055-14061
DOI: 10.1039/C5NR03251B, Paper
Askar Syrlybekov, Han-Chun Wu, Ozhet Mauit, Ye-Cun Wu, Pierce Maguire, Abbas Khalid, Cormac O Coileain, Leo Farrell, Cheng-Lin Heng, Mohamed Abid, Huajun Liu, Li Yang, Hong-Zhou Zhang, Igor V. Shvets
An anisotropic resistance switching behavior has been observed in Fe3O4 thin films on stepped SrTiO3 substrates.
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