Wednesday, August 26, 2015

Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR04239A, Communication
E Suh, Ah Hyun ParK, Tae Hoon Seo, Chandramohan Samygounder, Gun Hee Lee, Kyung Hyun Min, Seula Lee, Myung Jong Kim, Yong Gyoo Hwang
A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating...
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