Wednesday, August 26, 2015

Detection of the Insulating Gap and Conductive Filament Growth Direction in Resistive Memories

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR03314D, Paper
Eilam Yalon, Ilya Karpov, Victor G Karpov, Ilan Riess, Dima Kalaev, Dan Ritter
Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth...
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