Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs
Nano Letters
DOI: 10.1021/acs.nanolett.5b00493
Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar, Raman Sankar, Zachary A. Bogorad, Fang-Cheng Chou, Yit-Tsong Chen and Xuan P. A. Gao Click for full article
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