Tuesday, May 05, 2015

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.5b00493

Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar, Raman Sankar, Zachary A. Bogorad, Fang-Cheng Chou, Yit-Tsong Chen and Xuan P. A. Gao
Click for full article

No comments:

Post a Comment