Monday, May 18, 2015

Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C4NR06417H, Paper
Xinglong Shao, Li Wei Zhou, Kyung Jean Yoon, Hao Jiang, Jin Shi Zhao, Kai Liang Zhang, Sijung Yoo, Cheol Seong Hwang
Electronic bipolar resistance switching (eBRS) in an Al/TiOx/Al structure, where the TiOx layer was reactively sputter-deposited, was examined in conjunction with a structural analysis using transmission electron microscopy. A thin...
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