Time-resolved photo and radio-luminescence studies demonstrate the possibility of using InGaN/GaN quantum wells as fast scintillators

In the recent publication by Hospodková et al , the authors investigate III-N quantum well structures as potential fast scintillators (Hospodková et al 2014 Nanotechnology 25 [http://ift.tt/1Al3jFr] 455501 ). The InGaN/GaN quantum well structures are grown using metal organic vapour phase epitaxy on a sapphire substrate and the fast carrier decay times are characterized by time resolved photo and radioluminescence.

G Balakrishnan

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