Thursday, February 26, 2015

Optimized growth of graphene on SiC: from the dynamic flip mechanism




Nanoscale , 2015, 7,4522-4528

DOI: 10.1039/C4NR07197B, Paper

Dandan Wang, Lei Liu, Wei Chen, Xiaobo Chen, Han Huang, Jun He, Yuan-Ping Feng, A. T. S. Wee, D. Z. Shen

A vacancy assisted Si-C bond flipping model, together with an energetic-beam controlled growth method, has been proposed for graphene growth on SiC.

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