Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR07197B, Paper
DOI: 10.1039/C4NR07197B, Paper
Dandan Wang, Lei Liu, Wei Chen, Xiaobo Chen, Han Huang, Jun He, Yuan-Ping Feng, A. T. S. Wee, D. Z. Shen
A vacancy assisted Si-C bond flipping model, together with an energetic-beam controlled growth method, has been proposed for graphene growth on SiC.
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A vacancy assisted Si-C bond flipping model, together with an energetic-beam controlled growth method, has been proposed for graphene growth on SiC.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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