Wednesday, February 18, 2015

Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays




Nanoscale , 2015, Advance Article

DOI: 10.1039/C4NR06922F, Paper

Ming Wang, Jiantao Zhou, Yuchao Yang, Siddharth Gaba, Ming Liu, Wei D. Lu

The conduction mechanism of a Pd/TaOx /Ta/Pd selector device, which exhibits high non-linearity ([similar]104 ) and excellent uniformity, has been systematically investigated by current-voltage-temperature characterization.

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