Nanoscale , 2015, 7,1280-1284
DOI: 10.1039/C4NR06057A, Communication
DOI: 10.1039/C4NR06057A, Communication
Shisheng Li, Shunsuke Sakurai, Don N. Futaba, Kenji Hata
An NiO nanoparticle point etching method has been utilised to etch metallic SWCNT pathways selectively and highly locally, achieving a huge increase in the on/off ratios of FET devices while minimizing the unavoidable drop in on-state current.
The content of this RSS Feed (c) The Royal Society of Chemistry
An NiO nanoparticle point etching method has been utilised to etch metallic SWCNT pathways selectively and highly locally, achieving a huge increase in the on/off ratios of FET devices while minimizing the unavoidable drop in on-state current.
The content of this RSS Feed (c) The Royal Society of Chemistry
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