Wednesday, December 17, 2014

Tunable Charge-Trap Memory Based on Few-Layer MoS2

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ACS Nano

DOI: 10.1021/nn5059419




Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou and Faxian Xiu

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