Wednesday, December 03, 2014

Transport limits in defect-engineered LaAlO3/SrTiO3 bilayers




Nanoscale , 2015, Advance Article

DOI: 10.1039/C4NR06272H, Paper

Felix Gunkel, Sebastian Wicklein, Susanne Hoffmann-Eifert, Paul Meuffels, Peter Brinks, Mark Huijben, Guus Rijnders, Rainer Waser, Regina Dittmann

The electrical properties of the metallic interface in LaAlO3 /SrTiO3 (LAO/STO) bilayers are investigated with focus on the role of cationic defects in thin film STO.

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