Nanoscale , 2015, 7,747-757
DOI: 10.1039/C4NR05129G, Paper
DOI: 10.1039/C4NR05129G, Paper
Muhammad Waqas Iqbal, Muhammad Zahir Iqbal, Muhammad Farooq Khan, Muhammad Arslan Shehzad, Yongho Seo, Jonghwa Eom
We have developed a doping technique to drastically improve electrical and photoelectric characteristics of WS2 field-effect transistors.
The content of this RSS Feed (c) The Royal Society of Chemistry
We have developed a doping technique to drastically improve electrical and photoelectric characteristics of WS2 field-effect transistors.
The content of this RSS Feed (c) The Royal Society of Chemistry
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