Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR05008H, Paper
DOI: 10.1039/C4NR05008H, Paper
Serge Zhuiykov, Eugene Kats, Benjamin Carey, Sivacarendran Balendhran
The field-effect-transistor (FET) architecture based on quasi two-dimensional (Q2D) [small beta]-WO3 and H+ intercalated WO3-x nano-flakes with thickness equal to, or less than, 10 nm and tunable flake's bandgap has been developed and investigated.
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The field-effect-transistor (FET) architecture based on quasi two-dimensional (Q2D) [small beta]-WO3 and H+ intercalated WO3-x nano-flakes with thickness equal to, or less than, 10 nm and tunable flake's bandgap has been developed and investigated.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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