Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR04286G, Paper
DOI: 10.1039/C4NR04286G, Paper
Na Gao, Wei Lin, Xue Chen, Kai Huang, Shuping Li, Jinchai Li, Hangyang Chen, Xu Yang, Li Ji, Edward T. Yu, Junyong Kang
Ultra-short-period (AlN)m /(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection.
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Ultra-short-period (AlN)m /(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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