Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR03866E, Paper
DOI: 10.1039/C4NR03866E, Paper
Xiang-Zhong Chen, Xin Chen, Xu Guo, Yu-Shuang Cui, Qun-Dong Shen, Hai-Xiong Ge
Highly ordered arrays of a defect-modified ferroelectric polymer are fabricated by nanoimprint lithography for low-energy-consuming nonvolatile memory application.
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Highly ordered arrays of a defect-modified ferroelectric polymer are fabricated by nanoimprint lithography for low-energy-consuming nonvolatile memory application.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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