Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR04816D, Paper
DOI: 10.1039/C4NR04816D, Paper
Zhenyu Jin, Seokhee Shin, Do Hyun Kwon, Seung-Joo Han, Yo-Sep Min
An amorphous MoS2 thin film is grown at 100 [degree]C on SiO2 /Si by atomic layer deposition using molybdenum hexacarbonyl and dimethyldisulfide. The as-grown film is crystallized with (002) basal planes in a direction parallel to the substrate.
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An amorphous MoS2 thin film is grown at 100 [degree]C on SiO2 /Si by atomic layer deposition using molybdenum hexacarbonyl and dimethyldisulfide. The as-grown film is crystallized with (002) basal planes in a direction parallel to the substrate.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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