Monday, October 20, 2014

InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

We prepare InGaN/GaN multiple quantum well (MQW) structure by metal–organic vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scales. The photoluminescence and radioluminescence were measured: we have shown that the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band I QW /I YL depends strongly on the type and intensity of excitation. Slower scintillation decay measured at YL band maximum confirmed the presence of several radiative recombination centres responsible for wide YL band, which also partially overlap with the QW peak. Further improvements of the structure are suggested, but even the presently reported decay characteristics of the excitonic emission in MQW are bet...

Alice Hospodková, Martin Nikl, Oliva Pacherová, Jiří Oswald, Petr Brůža, Dalibor Pánek, Bartosz Foltynski, Eduard Hulicius, Alena Beitlerová and Michael Heuken

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