Tuesday, September 16, 2014

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR04228J, Paper

Chung-Che Huang, Feras Al-Saab, Yudong Wang, Jun-Yu Ou, John C. Walker, Shuncai Wang, Behrad Gholipour, Robert E. Simpson, Daniel W. Hewak

Nano-scale MoS2 thin films are fabricated by APCVD at ambient temperature, followed by a two-step annealing process.

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