Monday, September 15, 2014

Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR03472D, Communication

Rui Yang, Zenghui Wang, Philip X.-L. Feng

Experimental and modeling results show that multilayer MoS2 field-effect transistors can have higher electrical breakdown current than single-layer devices.

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