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Tuesday, August 19, 2014
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
ACS Nano
DOI: 10.1021/nn503284n
Min Sup Choi, Deshun Qu, Daeyeong Lee, Xiaochi Liu, Kenji Watanabe, Takashi Taniguchi and Won Jong Yoo
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