Wednesday, August 20, 2014

Exploration of yttria films as gate dielectrics in sub-50 nm carbon nanotube field-effect transistors




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR03475A, Paper

Li Ding, Zhiyong Zhang, Jun Su, Qunqing Li, Lian-Mao Peng

Thin yttria films were investigated for use as gate dielectrics in carbon nanotube field-effect transistors (CNTFETs) with the gate length scaled down to sub-50 nm size.

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