Thursday, July 17, 2014

Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR02142H, Paper

Muhammad R. Islam, Narae Kang, Udai Bhanu, Hari P. Paudel, Mikhail Erementchouk, Laurene Tetard, Michael N. Leuenberger, Saiful I. Khondaker

We have demonstrated tuning of the electrical property of single layer MoS2 from semiconducting to the insulating regime by oxygen plasma.

To cite this article before page numbers are assigned, use the DOI form of citation above.

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment