Nanoscale , 2014, 6,8978-8983
DOI: 10.1039/C4NR02164A, Paper
DOI: 10.1039/C4NR02164A, Paper
Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou, Ya-Qiong Xu
Electrical and optoelectronic properties of few-layer black phosphorus field-effect transistors are investigated through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements.
The content of this RSS Feed (c) The Royal Society of Chemistry
Electrical and optoelectronic properties of few-layer black phosphorus field-effect transistors are investigated through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements.
The content of this RSS Feed (c) The Royal Society of Chemistry
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