Friday, July 11, 2014

Polarized photocurrent response in black phosphorus field-effect transistors




Nanoscale , 2014, 6,8978-8983

DOI: 10.1039/C4NR02164A, Paper

Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou, Ya-Qiong Xu

Electrical and optoelectronic properties of few-layer black phosphorus field-effect transistors are investigated through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements.

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