Wednesday, July 16, 2014

Broadband antireflection and field emission properties of TiN-coated Si-nanopillars




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR01874E, Paper

Yuan-Ming Chang, Srikanth Ravipati, Pin-Hsu Kao, Jiann Shieh, Fu-Hsiang Ko, Jenh-Yih Juang

Superior broadband (350-1500 nm) antireflective performance is obtained in the TiN/Si-nanopillar heterostructure fabricated by the one-step self-masking dry etching method.

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