Wednesday, April 16, 2014

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C4NR00028E, Paper

Zeyuan Ni, Hongxia Zhong, Xinhe Jiang, Ruge Quhe, Guangfu Luo, Yangyang Wang, Meng Ye, Jin-Bo Yang, Jun-jie Shi, Jing Lu

By using first-principles calculations, we predict that a sizable band gap can be opened at the Dirac point of silicene without degrading silicene's electronic properties with n-type doping by Cu,...

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment