Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film

We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (∼10 4 ), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (∼10 5 ) and stable retention characteristics (>10 3 s) under lower programming voltage (−1 V and −0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different ...

Mingdong Yi, Yong Cao, Haifeng Ling, Zhuzhu Du, Laiyuan Wang, Tao Yang, Quli Fan, Linghai Xie and Wei Huang

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