Tuesday, April 15, 2014

Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C4NR00507D, Paper

Ji-Wook Yoon, Jung Ho Yoon, Jong-Heun Lee, Cheol Seong Hwang

The electrical resistance switching (RS) properties of amorphous HfO2 (a-HfO2) and crystalline HfO2 (c-HfO2) thin films grown on a TiN substrate via atomic layer deposition were examined using DC current-voltage...

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