Nanoscale , 2014, Advance Article
DOI: 10.1039/C3NR06690H, Paper
DOI: 10.1039/C3NR06690H, Paper
Ngoc Huynh Van, Jae-Hyun Lee, Jung Inn Sohn, Seung Nam Cha, Dongmok Whang, Jong Min Kim, Dae Joon Kang
High performance NWCMOS inverter devices by employing n- and p-type Si NWFETs with tunable threshold voltage for digital logic applications.
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High performance NWCMOS inverter devices by employing n- and p-type Si NWFETs with tunable threshold voltage for digital logic applications.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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