Nanoscale , 2014, Accepted Manuscript
DOI: 10.1039/C4NR00112E, Paper
DOI: 10.1039/C4NR00112E, Paper
Feras Al-Dirini, Faruque M Hossain, Ampalavanapillai Nirmalathas, Stan Skafidas
We present an asymmetrically-gated Graphene Self-Switching Diode (G-SSD) as a new negative differential resistance (NDR) device, and study its transport properties using Nonequilibrium Green's Function (NEGF) formalism and the Extended...
The content of this RSS Feed (c) The Royal Society of Chemistry
We present an asymmetrically-gated Graphene Self-Switching Diode (G-SSD) as a new negative differential resistance (NDR) device, and study its transport properties using Nonequilibrium Green's Function (NEGF) formalism and the Extended...
The content of this RSS Feed (c) The Royal Society of Chemistry
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